FGH40T120SMDF155 brand new original schematic diagram Functional circuit principle of each pin Chip pin definition - China IC Network - Core 37
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  • Shenzhen Xinfulin Electronics Co., Ltd

         This member has used this website for more than 15 years

  • FGH40T120SMDF155
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  •  QQ:2881495808 QQ:2881495808 copy
     QQ:308365177 QQ:308365177 copy
  • thirteen billion four hundred and eighteen million five hundred and sixty-four thousand three hundred and thirty-seven  QQ:2881495808 QQ:308365177
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  •  FGH40T120SMDF155
  • Shenzhen Ruitianxin Technology Co., Ltd

      This member has used this website for more than 7 years
  • FGH40T120SMDF155
  • number 20000 
  • manufactor FAIRCHILD 
  • encapsulation O-3P 
  • Batch No 22+ 
  • Shenzhen stock to ensure original and genuine products
  •  QQ:1940213521 QQ:1940213521 copy
  • fifteen billion nine hundred and seventy-three million five hundred and fifty-eight thousand six hundred and eighty-eight  QQ:1940213521
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FGH40T120SMDL4 product parameters
model: FGH40T120SMDL4
Brand Name: ON Semiconductor
Lead free: Lead free
Lifecycle: Active
IHS Manufacturer: ON SEMICONDUCTOR
Packing instructions: FLANGE MOUNT, R-PSFM-T4
Manufacturer's package code: 340CJ
Reach Compliance Code: compliant
ECCN code: EAR99
HTS Code: 8541.29.00.95
Factory Lead Time: 5 weeks
Risk level: one point four four
Maximum collector current (IC): 80 A
Maximum collector emitter voltage: 1200 V
to configure: SINGLE WITH BUILT-IN DIODE
Maximum threshold voltage of gate emitter: 7.5 V
Gate emitter maximum voltage: 25 V
JEDEC-95 code: TO-247
JESD-30 code: R-PSFM-T4
JESD-609 code: e3
Number of elements: one
Number of terminals: three
Maximum operating temperature: 175 °C
Minimum operating temperature: -55 °C
Packaging body material: PLASTIC/EPOXY
Package shape: RECTANGULAR
Packaging form: FLANGE MOUNT
Peak reflux temperature (° C): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Maximum power dissipation (Abs): 555 W
Surface mounting: NO
Terminal surface layer: Tin (Sn)
Terminal type: THROUGH-HOLE
Terminal location: SINGLE
Maximum time at peak reflux temperature: NOT SPECIFIED
Transistor applications: POWER CONTROL
Transistor element material: SILICON
Nominal disconnection time (toff): 542 ns
Nominal switching on time (ton): 90 ns
VCEsat-Max: 2.4 V
Base Number Matches: one
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