| model: | FGA25N120ANTDTU |
|
| Rohs certification or not: | accord with |
| Lifecycle: | Active |
| IHS Manufacturer: | ON SEMICONDUCTOR |
| Packing instructions: | , |
| Reach Compliance Code： | compliant |
| ECCN code: | EAR99 |
| HTS Code: | 8541.29.00.95 |
| Factory Lead Time： | 1 week |
| Risk level: | zero point eight eight |
| Samacsys Confidence： | four |
| Samacsys Status： | Released |
| 2D Presentation： | https://componentsearchengine.com/2D/0T/866137.2.1.png |
| Schematic Symbol： | https://componentsearchengine.com/symbol.php?partID=866137 |
| PCB Footprint： | https://componentsearchengine.com/footprint.php?partID=866137 |
| 3D View： | https://componentsearchengine.com/viewer/3D.php?partID=866137 |
| Samacsys PartID： | eight hundred and sixty-six thousand one hundred and thirty-seven |
| Samacsys Image： | https://componentsearchengine.com/Images/9/FGA25N120ANTDTU.jpg |
| Samacsys Thumbnail Image： | https://componentsearchengine.com/Thumbnails/2/FGA25N120ANTDTU.jpg |
| Samacsys Pin Count： | three |
| Samacsys Part Category： | Transistor IGBT |
| Samacsys Package Category： | Transistor Outline, Vertical |
| Samacsys Footprint Name： | TO-3P_1 |
| Samacsys Released Date： | 2018-02-23 11:25:42 |
| Is Samacsys： | N |
| Maximum collector current (IC): | 25 A |
| Maximum collector emitter voltage: | 1200 V |
| Maximum threshold voltage of gate emitter: | 7.5 V |
| Gate emitter maximum voltage: | 20 V |
| JESD-609 code: | e3 |
| Maximum operating temperature: | 150 °C |
| Peak reflux temperature (° C): | NOT SPECIFIED |
| Polarity/Channel Type: | N-CHANNEL |
| Maximum power dissipation (Abs): | 312 W |
| Subcategory: | Insulated Gate BIP Transistors |
| Surface mounting: | NO |
| Terminal surface layer: | Tin (Sn) |
| Maximum time at peak reflux temperature: | NOT SPECIFIED |
| Base Number Matches： | one |
|
