model: | FGA25N120ANTD |
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Rohs certification or not: | accord with |
Lifecycle: | Obsolete |
Part package code: | TO-3P |
Packing instructions: | FLANGE MOUNT, R-PSFM-T3 |
Number of stitches: | two |
Reach Compliance Code: | unknown |
ECCN code: | EAR99 |
HTS Code: | 8541.29.00.95 |
Risk level: | five point six one |
Maximum collector current (IC): | 50 A |
Maximum collector emitter voltage: | 1200 V |
to configure: | SINGLE WITH BUILT-IN DIODE |
Maximum landing time (tf): | 180 ns |
Maximum threshold voltage of gate emitter: | 7.5 V |
Gate emitter maximum voltage: | 20 V |
JESD-30 code: | R-PSFM-T3 |
Number of elements: | one |
Number of terminals: | three |
Maximum operating temperature: | 150 °C |
Packaging body material: | PLASTIC/EPOXY |
Package shape: | RECTANGULAR |
Packaging form: | FLANGE MOUNT |
Peak reflux temperature (° C): | NOT SPECIFIED |
Polarity/Channel Type: | N-CHANNEL |
Maximum power dissipation (Abs): | 312 W |
Certification status: | Not Qualified |
Maximum rise time (tr): | 90 ns |
Subcategory: | Insulated Gate BIP Transistors |
Surface mounting: | NO |
Terminal type: | THROUGH-HOLE |
Terminal location: | SINGLE |
Maximum time at peak reflux temperature: | NOT SPECIFIED |
Transistor applications: | POWER CONTROL |
Transistor element material: | SILICON |
Nominal disconnection time (toff): | 354 ns |
Nominal switching on time (ton): | 110 ns |
Base Number Matches: | one |
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