model: | FDV304P |
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Brand Name: | ON Semiconductor |
Lead free: | Lead free |
Lifecycle: | Active |
IHS Manufacturer: | ON SEMICONDUCTOR |
Manufacturer's package code: | 318-08 |
Reach Compliance Code: | compliant |
ECCN code: | EAR99 |
HTS Code: | 8541.21.00.95 |
Factory Lead Time: | 1 week |
Risk level: | one point zero six |
Samacsys Description: | ON SEMICONDUCTOR - FDV304P - Power MOSFET, P Channel, 25 V, 460 mA, 1.22 ohm, SOT-23, Surface Mount |
to configure: | SINGLE WITH BUILT-IN DIODE |
Minimum drain source breakdown voltage: | 25 V |
Maximum drain current (Abs) (ID): | 0.46 A |
Maximum drain current (ID): | 0.46 A |
Maximum drain source on resistance: | 1.1 Ω |
FET technology: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code: | R-PDSO-G3 |
JESD-609 code: | e3 |
Humidity sensitivity level: | one |
Number of elements: | one |
Number of terminals: | three |
Operating mode: | ENHANCEMENT MODE |
Maximum operating temperature: | 150 °C |
Minimum operating temperature: | -55 °C |
Packaging body material: | PLASTIC/EPOXY |
Package shape: | RECTANGULAR |
Packaging form: | SMALL OUTLINE |
Peak reflux temperature (° C): | two hundred and sixty |
Polarity/Channel Type: | P-CHANNEL |
Maximum power dissipation (Abs): | 0.35 W |
Certification status: | Not Qualified |
Subcategory: | Other Transistors |
Surface mounting: | YES |
Terminal surface layer: | Tin (Sn) |
Terminal type: | GULL WING |
Terminal location: | DUAL |
Maximum time at peak reflux temperature: | thirty |
Transistor applications: | SWITCHING |
Transistor element material: | SILICON |
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