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  • Shenzhen Xinfulin Electronics Co., Ltd

         This member has used this website for more than 15 years

  • FDS8449-G
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  • manufactor -
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  • Batch No -
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  •  QQ:2881495808 QQ:2881495808 copy
     QQ:308365177 QQ:308365177 copy
  • thirteen billion four hundred and eighteen million five hundred and sixty-four thousand three hundred and thirty-seven  QQ:2881495808 QQ:308365177
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  •  FDS8449-G drawing
  • Beijing Shoutian International Co., Ltd

      This member has used this website for more than 16 years
  • FDS8449-G
  • number 1773 
  • manufactor FAIRCHIL 
  • encapsulation SOP 
  • Batch No 16+ 
  • 100% genuine, spot stock
  •  QQ:528164397 QQ:528164397 copy
     QQ:1318502189 QQ:1318502189 copy
  • 010-62565447  QQ:528164397 QQ:1318502189

Product parameters of product model FDS8449-G and instructions for use of FDS8449-G

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FDS8449_F085 Product Parameters
model: FDS8449_F085
Brand Name: ON Semiconductor
Rohs certification or not: accord with
Lifecycle: Active
Packing instructions: SMALL OUTLINE, R-PDSO-G8
Manufacturer's package code: M08A
Reach Compliance Code: compliant
ECCN code: EAR99
HTS Code: 8541.29.00.95
Factory Lead Time: 6 weeks
Risk level: five point two
to configure: SINGLE WITH BUILT-IN DIODE
Minimum drain source breakdown voltage: 40 V
Maximum drain current (Abs) (ID): 7.6 A
Maximum drain current (ID): 7.6 A
Maximum drain source on resistance: 0.029 Ω
FET technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 code: R-PDSO-G8
JESD-609 code: e4
Humidity sensitivity level: one
Number of elements: one
Number of terminals: eight
Operating mode: ENHANCEMENT MODE
Maximum operating temperature: 150 °C
Packaging body material: PLASTIC/EPOXY
Package shape: RECTANGULAR
Packaging form: SMALL OUTLINE
Peak reflux temperature (° C): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Maximum power dissipation (Abs): 2.5 W
Certification status: Not Qualified
Subcategory: FET General Purpose Power
Surface mounting: YES
Terminal surface layer: Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Terminal type: GULL WING
Terminal location: DUAL
Maximum time at peak reflux temperature: NOT SPECIFIED
Transistor applications: SWITCHING
Transistor element material: SILICON
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