FDS6570V_NL Application Article Market Situation Hot Spot Use Introduction Supplier Quotation - China IC Network - Core 37
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  • Shenzhen Xinfulin Electronics Co., Ltd

         This member has used this website for more than 15 years

  • FDS6570V_NL
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  •  FDS6570V_NL diagram
  • Shenzhen Xinfulin Electronics Co., Ltd

      This member has used this website for more than 15 years
  • FDS6570V_NL
  • number 98500 
  • manufactor FAIRCHILD 
  • encapsulation SOP-8 
  • Batch No 23+ 
  • Real stock brand new genuine! Agent this model
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  • 0755-88917743  QQ:2881495751
  •  FDS6570V_NL diagram
  • Beijing Yuankun Weiye Technology Co., Ltd

      This member has used this website for more than 17 years
  • FDS6570V_NL
  • number 5000 
  • manufactor FAIRCHIL 
  • encapsulation SOP-8 
  • Batch No 16+ 
  • 100% genuine, spot stock
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  •  FDS6570V_NL diagram
  • Shenzhen First Line Semiconductor Co., Ltd

      This member has used this website for more than 11 years
  • FDS6570V_NL
  • number 25000 
  • manufactor Original brand
  • encapsulation Original factory appearance
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  • New and original parts of the stock and other orders
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  • 0755-88608801 multi line  QQ:2881493920 QQ:2881493921
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FDS6572A product parameters
model: FDS6572A
Rohs certification or not: accord with
Lifecycle: Obsolete
IHS Manufacturer: FAIRCHILD SEMICONDUCTOR CORP
Part package code: SOT
Packing instructions: SO-8
Number of stitches: eight
Reach Compliance Code: unknown
ECCN code: EAR99
Risk level: five point four four
to configure: SINGLE WITH BUILT-IN DIODE
Minimum drain source breakdown voltage: 20 V
Maximum drain current (Abs) (ID): 16 A
Maximum drain current (ID): 16 A
Maximum drain source on resistance: 0.006 Ω
FET technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 code: R-PDSO-G8
JESD-609 code: e3
Humidity sensitivity level: one
Number of elements: one
Number of terminals: eight
Operating mode: ENHANCEMENT MODE
Maximum operating temperature: 175 °C
Packaging body material: PLASTIC/EPOXY
Package shape: RECTANGULAR
Packaging form: SMALL OUTLINE
Peak reflux temperature (° C): two hundred and sixty
Polarity/Channel Type: N-CHANNEL
Maximum power dissipation (Abs): 1 W
Certification status: Not Qualified
Subcategory: FET General Purpose Power
Surface mounting: YES
Terminal surface layer: Matte Tin (Sn)
Terminal type: GULL WING
Terminal location: DUAL
Maximum time at peak reflux temperature: NOT SPECIFIED
Transistor applications: SWITCHING
Transistor element material: SILICON
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