| model: | FDS4470 |
|
| Brand Name： | Fairchild Semiconductor |
| Lead free: | Lead free |
| Rohs certification or not: | accord with |
| Lifecycle: | Transferred |
| Part package code: | SOIC |
| Packing instructions: | SMALL OUTLINE, R-PDSO-G8 |
| Number of stitches: | eight |
| Manufacturer's package code: | 8LD, JEDEC MS-012, .150"NARROW BODY |
| Reach Compliance Code： | compliant |
| ECCN code: | EAR99 |
| HTS Code: | 8541.29.00.95 |
| Risk level: | three point three two |
| Avalanche energy efficiency grade (Eas): | 370 mJ |
| to configure: | SINGLE WITH BUILT-IN DIODE |
| Minimum drain source breakdown voltage: | 40 V |
| Maximum drain current (Abs) (ID): | 12.5 A |
| Maximum drain current (ID): | 12.5 A |
| Maximum drain source on resistance: | 0.009 Ω |
| FET technology: | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code: | R-PDSO-G8 |
| JESD-609 code: | e3 |
| Humidity sensitivity level: | one |
| Number of elements: | one |
| Number of terminals: | eight |
| Operating mode: | ENHANCEMENT MODE |
| Maximum operating temperature: | 175 °C |
| Packaging body material: | PLASTIC/EPOXY |
| Package shape: | RECTANGULAR |
| Packaging form: | SMALL OUTLINE |
| Peak reflux temperature (° C): | two hundred and sixty |
| Polarity/Channel Type: | N-CHANNEL |
| Maximum power dissipation (Abs): | 1.2 W |
| Maximum pulse drain current (IDM): | 50 A |
| Certification status: | Not Qualified |
| Subcategory: | FET General Purpose Power |
| Surface mounting: | YES |
| Terminal surface layer: | Matte Tin (Sn) |
| Terminal type: | GULL WING |
| Terminal location: | DUAL |
| Maximum time at peak reflux temperature: | NOT SPECIFIED |
| Transistor applications: | SWITCHING |
| Transistor element material: | SILICON |
| Base Number Matches： | one |
|
