model: | FDS3992 |
|
Brand Name: | ON Semiconductor |
Lead free: | Lead free |
Lifecycle: | Active |
IHS Manufacturer: | ON SEMICONDUCTOR |
Packing instructions: | SMALL OUTLINE, R-PDSO-G8 |
Manufacturer's package code: | 751EB |
Reach Compliance Code: | compliant |
ECCN code: | EAR99 |
HTS Code: | 8541.29.00.95 |
Factory Lead Time: | 1 week |
Risk level: | zero point nine five |
Samacsys Confidence: | three |
Samacsys Status: | Released |
2D Presentation: | https://componentsearchengine.com/2D/0T/1082707.2.1.png |
Schematic Symbol: | https://componentsearchengine.com/symbol.php?partID=1082707 |
PCB Footprint: | https://componentsearchengine.com/footprint.php?partID=1082707 |
3D View: | https://componentsearchengine.com/viewer/3D.php?partID=1082707 |
Samacsys PartID: | one million eighty-two thousand seven hundred and seven |
Samacsys Image: | https://componentsearchengine.com/Images/9/FDS3992.jpg |
Samacsys Thumbnail Image: | https://componentsearchengine.com/Thumbnails/2/FDS3992.jpg |
Samacsys Pin Count: | eight |
Samacsys Part Category: | Integrated Circuit |
Samacsys Package Category: | Small Outline Packages |
Samacsys Footprint Name: | FDS3992FDS3992 |
Samacsys Released Date: | 2019-01-11 10:49:19 |
Is Samacsys: | N |
Avalanche energy efficiency grade (Eas): | 167 mJ |
to configure: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Minimum drain source breakdown voltage: | 100 V |
Maximum drain current (Abs) (ID): | 4.5 A |
Maximum drain current (ID): | 4.5 A |
Maximum drain source on resistance: | 0.062 Ω |
FET technology: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code: | R-PDSO-G8 |
JESD-609 code: | e3 |
Humidity sensitivity level: | one |
Number of elements: | two |
Number of terminals: | eight |
Operating mode: | ENHANCEMENT MODE |
Maximum operating temperature: | 150 °C |
Minimum operating temperature: | -55 °C |
Packaging body material: | PLASTIC/EPOXY |
Package shape: | RECTANGULAR |
Packaging form: | SMALL OUTLINE |
Peak reflux temperature (° C): | NOT SPECIFIED |
Polarity/Channel Type: | N-CHANNEL |
Maximum power dissipation (Abs): | 2.5 W |
Certification status: | Not Qualified |
Subcategory: | FET General Purpose Power |
Surface mounting: | YES |
Terminal surface layer: | Tin (Sn) |
Terminal type: | GULL WING |
Terminal location: | DUAL |
Maximum time at peak reflux temperature: | NOT SPECIFIED |
Transistor applications: | SWITCHING |
Transistor element material: | SILICON |
Base Number Matches: | one |
|