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  • Shenzhen Xinfulin Electronics Co., Ltd

         This member has used this website for more than 15 years

  • FDPF12N60N2
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  •  QQ:2881495808 QQ:2881495808 copy
     QQ:308365177 QQ:308365177 copy
  • thirteen billion four hundred and eighteen million five hundred and sixty-four thousand three hundred and thirty-seven  QQ:2881495808 QQ:308365177
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Product parameters of product model FDPF12N60N2 and instructions for use of FDPF12N60N2

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FDPF12N60NZ product parameters
model: FDPF12N60NZ
Brand Name: Fairchild Semiconductor
Lead free: Lead free
Rohs certification or not: accord with
Lifecycle: Transferred
IHS Manufacturer: FAIRCHILD SEMICONDUCTOR CORP
Part package code: TO-220F
Packing instructions: ROHS COMPLIANT, SC-91A, TO-220F, 3 PIN
Number of stitches: three
Manufacturer's package code: TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
Reach Compliance Code: not_compliant
ECCN code: EAR99
HTS Code: 8541.29.00.95
Risk level: five point seven two
Is Samacsys: N
Avalanche energy efficiency grade (Eas): 565 mJ
Enclosure connection: ISOLATED
to configure: SINGLE WITH BUILT-IN DIODE
Minimum drain source breakdown voltage: 600 V
Maximum drain current (Abs) (ID): 12 A
Maximum drain current (ID): 12 A
Maximum drain source on resistance: 0.65 Ω
FET technology: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code: TO-220AB
JESD-30 code: R-PSFM-T3
JESD-609 code: e3
Number of elements: one
Number of terminals: three
Operating mode: ENHANCEMENT MODE
Maximum operating temperature: 150 °C
Packaging body material: PLASTIC/EPOXY
Package shape: RECTANGULAR
Packaging form: FLANGE MOUNT
Peak reflux temperature (° C): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Maximum power dissipation (Abs): 39 W
Maximum pulse drain current (IDM): 48 A
Certification status: Not Qualified
Subcategory: FET General Purpose Power
Surface mounting: NO
Terminal surface layer: Matte Tin (Sn)
Terminal type: THROUGH-HOLE
Terminal location: SINGLE
Maximum time at peak reflux temperature: NOT SPECIFIED
Transistor applications: SWITCHING
Transistor element material: SILICON
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