| model: | FDMS8880 |
|
| Lead free: | Lead free |
| Rohs certification or not: | accord with |
| Lifecycle: | Active |
| Packing instructions: | ROHS COMPLIANT, POWER 56, 8 PIN |
| Number of stitches: | two hundred and forty |
| Reach Compliance Code： | unknown |
| Risk level: | five point three seven |
| Avalanche energy efficiency grade (Eas): | 60 mJ |
| Enclosure connection: | DRAIN |
| to configure: | SINGLE WITH BUILT-IN DIODE |
| Minimum drain source breakdown voltage: | 30 V |
| Maximum drain current (ID): | 13.5 A |
| Maximum drain source on resistance: | 0.0085 Ω |
| FET technology: | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code: | MO-240AA |
| JESD-30 code: | R-PDSO-N5 |
| JESD-609 code: | e3 |
| Humidity sensitivity level: | one |
| Number of elements: | one |
| Number of terminals: | five |
| Operating mode: | ENHANCEMENT MODE |
| Packaging body material: | PLASTIC/EPOXY |
| Package shape: | RECTANGULAR |
| Packaging form: | SMALL OUTLINE |
| Peak reflux temperature (° C): | two hundred and sixty |
| Polarity/Channel Type: | N-CHANNEL |
| Maximum pulse drain current (IDM): | 80 A |
| Certification status: | COMMERCIAL |
| Surface mounting: | YES |
| Terminal surface layer: | MATTE TIN |
| Terminal type: | NO LEAD |
| Terminal location: | DUAL |
| Maximum time at peak reflux temperature: | thirty |
| Transistor applications: | SWITCHING |
| Transistor element material: | SILICON |
| Base Number Matches： | one |
|
