FDMC8884QFN Application Article Market Situation Hot Spot Use Introduction Supplier Quotation - China IC Network - Core 37
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  • Shenzhen Xinfulin Electronics Co., Ltd

         This member has used this website for more than 15 years

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      This member has used this website for more than 13 years
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  • number 12707 
  • manufactor FAIRCHILD
  • encapsulation QFN 
  • Batch No Latest batch
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  • Shenzhen Fortune Electronic Technology Co., Ltd

      This member has used this website for more than 4 years
  • FDMC8884QFN
  • number 8500 
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  • Batch No 22+ 
  • Original spot goods can be viewed to support actual orders
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  • thirteen billion seven hundred and fourteen million six hundred and twenty-six thousand six hundred and twenty  QQ:2168183613
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  • Huafuxin (Shenzhen) Intelligent Technology Co., Ltd

      This member has used this website for more than 7 years
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  • number 15000 
  • manufactor FAIRCHILD
  • encapsulation QFN 
  • Batch No 22+ 
  • A large number of original and genuine products are hot in stock, with price advantage, and support for actual orders
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  • 0755-23482756  QQ:1368960024
  •  FDMC8884QFN diagram
  • Shenzhen Xinfulin Electronics Co., Ltd

      This member has used this website for more than 15 years
  • FDMC8884QFN
  • number 85000 
  • manufactor FAIRCHILD
  • encapsulation QFN 
  • Batch No 23+ 
  • Real stock brand new genuine! Agent this model
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FDMC9430L-F085 Product Parameters
model: FDMC9430L-F085
Brand Name: ON Semiconductor
Lead free: Lead free
Lifecycle: Active
IHS Manufacturer: ON SEMICONDUCTOR
Packing instructions: SMALL OUTLINE, S-PDSO-N4
Manufacturer's package code: 511DG
Reach Compliance Code: compliant
Risk level: one point five two
Avalanche energy efficiency grade (Eas): 21.6 mJ
Enclosure connection: DRAIN
to configure: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain source breakdown voltage: 40 V
Maximum drain current (Abs) (ID): 12 A
Maximum drain current (ID): 12 A
Maximum drain source on resistance: 0.008 Ω
FET technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 code: S-PDSO-N4
Humidity sensitivity level: one
Number of elements: two
Number of terminals: four
Operating mode: ENHANCEMENT MODE
Maximum operating temperature: 150 °C
Minimum operating temperature: -55 °C
Packaging body material: PLASTIC/EPOXY
Package shape: SQUARE
Packaging form: SMALL OUTLINE
Polarity/Channel Type: N-CHANNEL
Maximum power dissipation (Abs): 11.4 W
Reference standards: AEC-Q101
Surface mounting: YES
Terminal type: NO LEAD
Terminal location: DUAL
Transistor applications: SWITCHING
Transistor element material: SILICON
Maximum closing time (toff): 28 ns
Maximum opening time (ton): 13 ns
Base Number Matches: one
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