FDMC8884-F126 Chinese Information Application Article Market Situation Hot Spot Use Introduction - China IC Network - Core 37
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  • Shenzhen Xinfulin Electronics Co., Ltd

         This member has used this website for more than 15 years

  • FDMC8884-F126
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  •  QQ:2881495808 QQ:2881495808 copy
     QQ:308365177 QQ:308365177 copy
  • thirteen billion four hundred and eighteen million five hundred and sixty-four thousand three hundred and thirty-seven  QQ:2881495808 QQ:308365177
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  •  FDMC8884-F126 drawing
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      This member has used this website for more than 13 years
  • FDMC8884-F126
  • number 1068 
  • manufactor ON Semiconductor 
  • encapsulation  
  • Batch No Latest batch
  • Original factory and original company
  •  QQ:3008092965 QQ:3008092965 copy
     QQ:3008092965 QQ:3008092965 copy
  • 0755-83239307  QQ:3008092965 QQ:3008092965
  •  FDMC8884-F126 drawing
  • Shenzhen Hexie Shijia Electronics Co., Ltd

      This member has used this website for more than 13 years
  • FDMC8884-F126
  • number 1580 
  • manufactor ON Semiconductor 
  • encapsulation 8-MLP(3.3x3.3) 
  • Batch No Latest batch number
  • Brand new original fake one paste ten!
  •  QQ:1158840606 QQ:1158840606 copy
  • 0755+84501032  QQ:1158840606
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FDMC9430L-F085 Product Parameters
model: FDMC9430L-F085
Brand Name: ON Semiconductor
Lead free: Lead free
Lifecycle: Active
IHS Manufacturer: ON SEMICONDUCTOR
Packing instructions: SMALL OUTLINE, S-PDSO-N4
Manufacturer's package code: 511DG
Reach Compliance Code: compliant
Risk level: one point five two
Avalanche energy efficiency grade (Eas): 21.6 mJ
Enclosure connection: DRAIN
to configure: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain source breakdown voltage: 40 V
Maximum drain current (Abs) (ID): 12 A
Maximum drain current (ID): 12 A
Maximum drain source on resistance: 0.008 Ω
FET technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 code: S-PDSO-N4
Humidity sensitivity level: one
Number of elements: two
Number of terminals: four
Operating mode: ENHANCEMENT MODE
Maximum operating temperature: 150 °C
Minimum operating temperature: -55 °C
Packaging body material: PLASTIC/EPOXY
Package shape: SQUARE
Packaging form: SMALL OUTLINE
Polarity/Channel Type: N-CHANNEL
Maximum power dissipation (Abs): 11.4 W
Reference standards: AEC-Q101
Surface mounting: YES
Terminal type: NO LEAD
Terminal location: DUAL
Transistor applications: SWITCHING
Transistor element material: SILICON
Maximum closing time (toff): 28 ns
Maximum opening time (ton): 13 ns
Base Number Matches: one
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