model: | FDMC8678S |
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Brand Name: | Fairchild Semiconductor |
Lead free: | Lead free |
Rohs certification or not: | accord with |
Lifecycle: | Obsolete |
Part package code: | QFN |
Packing instructions: | ROHS COMPLIANT, POWER 33, 8 PIN |
Number of stitches: | eight |
Manufacturer's package code: | 8LD, PQFN,DUAL,JEDEC MO-240 BA, 3.3X3.3MM SINGLE TIED DAP |
Reach Compliance Code: | compliant |
ECCN code: | EAR99 |
HTS Code: | 8541.29.00.95 |
Risk level: | seven point four five |
Is Samacsys: | N |
Avalanche energy efficiency grade (Eas): | 181 mJ |
Enclosure connection: | DRAIN |
to configure: | SINGLE WITH BUILT-IN DIODE |
Minimum drain source breakdown voltage: | 30 V |
Maximum drain current (Abs) (ID): | 66 A |
Maximum drain current (ID): | 15 A |
Maximum drain source on resistance: | 0.0052 Ω |
FET technology: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code: | MO-240BA |
JESD-30 code: | R-PDSO-N5 |
JESD-609 code: | e4 |
Humidity sensitivity level: | one |
Number of elements: | one |
Number of terminals: | five |
Operating mode: | ENHANCEMENT MODE |
Maximum operating temperature: | 150 °C |
Packaging body material: | PLASTIC/EPOXY |
Package shape: | RECTANGULAR |
Packaging form: | SMALL OUTLINE |
Peak reflux temperature (° C): | two hundred and sixty |
Polarity/Channel Type: | N-CHANNEL |
Maximum power dissipation (Abs): | 41 W |
Maximum pulse drain current (IDM): | 60 A |
Certification status: | Not Qualified |
Subcategory: | FET General Purpose Power |
Surface mounting: | YES |
Terminal surface layer: | Nickel/Palladium/Gold (Ni/Pd/Au) |
Terminal type: | NO LEAD |
Terminal location: | DUAL |
Maximum time at peak reflux temperature: | thirty |
Transistor applications: | SWITCHING |
Transistor element material: | SILICON |
Base Number Matches: | one |
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