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  • Shenzhen Xinfulin Electronics Co., Ltd

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  • Shenzhen Xinmai Industrial Co., Ltd

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  • FDMC86106LZ  Spot stock
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  • Shenzhen Xinfulin Electronics Co., Ltd

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  • Shenzhen Xinfulin Electronics Co., Ltd

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  • Shenzhen Dejie Core City Technology Co., Ltd

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  • Shenzhen Jingmeilong Technology Co., Ltd

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  • Beijing Qitianxin Technology Co., Ltd

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  • Shenzhen Zhengxinxin Technology Co., Ltd

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  • Shenzhen Jingyu Technology Co., Ltd

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  • number 36218 
  • manufactor ON - Ansenmei
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  • Shenzhen Huaxin Shengshi Technology Co., Ltd

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  • Shenzhen Yuxing Micro Technology Co., Ltd

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  • Shenzhen Yichuangteng Electronic Technology Co., Ltd

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  • Shenzhen Hualaishen Electronics Co., Ltd

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  • Shenzhen Hexie Shijia Electronics Co., Ltd

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  • manufactor ON Semiconductor 
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  • Shenzhen Zhuoyue Microchip Electronics Co., Ltd

      This member has used this website for more than 12 years
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  • manufactor FAI 
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  • Shenzhen Keqing Electronics Co., Ltd

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  • Shenzhen Yuchuanxiang Technology Co., Ltd

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  • Shenzhen Xinmai Industrial Co., Ltd

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  • Shenzhen Fortune Electronic Technology Co., Ltd

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Product parameters of product model FDMC86106LZ and instructions for use of FDMC86106LZ

Overview of chip FDMC86106LZ

FDMC86106LZ is a high-performance N-channel MOSFET launched by Fairchild Semiconductor (acquired by ON Semiconductor), which is designed to meet the requirements for high efficiency and fast switching speed in various applications. This chip is usually used in DC-DC converter, power management, motor drive and other fields, making full use of its excellent electrical performance and high power carrying capacity. The key parameters of FDMC86106LZ make it an ideal choice for many modern electronic equipment.

Detailed parameters of chip FDMC86106LZ

FDMC86106LZ has the following main parameters:

1. Rated voltage (Vds): the maximum withstand voltage is 60V, which can adapt to various medium and high voltage power supply applications. 2. Rated current (Id): At 25 ° C ambient temperature, the maximum continuous drain current can reach 60A, which can support high-power applications. 3. Switching loss: The chip works under high-frequency switching conditions with low switching loss, which is suitable for high-frequency power conversion. 4. On resistance (Rds (on)): the minimum value is 7.5m Ω, which provides excellent conductivity and low heating capacity under high current conditions. 5. Package type: FDMC86106LZ adopts SO-8 package, which makes its footprint on the circuit board relatively small, but still provides good heat dissipation characteristics.

Manufacturer, packaging and packaging of chip FDMC86106LZ

FDMC86106LZ is produced by Fairchild Semiconductor (now ON Semiconductor). This semiconductor manufacturer has extensive experience in efficient power management solutions. In the general application in the market, the chip is generally used in desktop power supply, road and railway transportation and various portable electronic products.

For packaging and packaging, FDMC86106LZ uses SO-8 (Small Outline Package), which not only takes up less space and is suitable for surface mounting, but also can achieve efficient heat dissipation. SO-8 packaging design enables the MOSFET to maintain good performance in dense circuit board layout.

Description of pin and circuit diagram of chip FDMC86106LZ

The pins of FDMC86106LZ are arranged as follows:

1. Pin 1 (Gate): used to control the switch status of MOSFET, and control its conduction or cut-off through input voltage signal. 2. Pin 2 (Source): is the source pole of MOSFET, connected to the ground or negative pole of the circuit. 3. Pin 3 (Drain): drain, connected to the positive pole of load or power conversion circuit. 4. Pin 4-8: used for heat dissipation and circuit connection. The specific function needs to be determined according to the application circuit design.

The basic application circuit of FDMC86106LZ usually adopts switching power supply design. In the circuit diagram, MOSFET is connected with other components in reverse parallel, and its fast switching characteristics are used to achieve efficient energy conversion. For example, in the topology of DC-DC converter, FDMC86106LZ often constitutes the core component of switching mode power supply together with inductor and diode. This configuration enables the equipment to run flexibly and efficiently under different load conditions.

Use case of chip FDMC86106LZ

In practical applications, FDMC86106LZ is widely used in a variety of power management and conversion circuits. Here are some typical use cases:

1. Switched Mode Power Supply (SMPS): In the system design with high efficiency requirements, FDMC86106LZ can effectively replace the traditional linear power supply, and control the switch on and off through PWM (Pulse Width Modulation) signal, so as to achieve efficient power conversion.

2. Motor drive circuit: In the DC motor control system, the MOSFET can be used to specifically control the direction and speed of the motor. This kind of motor control circuit is widely used in some electric tools and household appliances, which uses the high switching frequency of FDMC86106LZ to achieve smooth driving.

3. LED driver: In the LED lighting system, FDMC86106LZ is very suitable for LED driving circuit because of its high efficiency and low on resistance. With the help of PWM modulation technology, it can not only adjust the brightness, but also improve the overall efficiency of the power supply.

4. Power management integrated circuit: In the intelligent power management system, FDMC86106LZ can be integrated with other power converters to achieve intelligent power regulation. Smart phones, tablet computers and other portable devices all use such integrated circuits.

5. Power Module: FDMC86106LZ is often used as the main switching element in the function of power module, supporting modular design, making development more flexible and convenient for designers to quickly test and integrate.

In the above application scenarios, FDMC86106LZ, with its excellent performance, shows more efficient energy management and conversion capabilities, and becomes an indispensable component in modern power design. Whether in consumer electronics, industrial automation or communication equipment, the chip can provide reliable performance support to meet the diversified needs of various industries.

Direct train with order
FDMC86106LZ product parameters
model: FDMC86106LZ
Lead free: Lead free
Rohs certification or not: accord with
Lifecycle: Active
Packing instructions: SMALL OUTLINE, S-PDSO-N5
Number of stitches: eight
Reach Compliance Code: compliant
Risk level: one point six nine
Other features: LOGIC LEVEL COMPATIBLE
Avalanche energy efficiency grade (Eas): 12 mJ
Enclosure connection: DRAIN
to configure: SINGLE WITH BUILT-IN DIODE
Minimum drain source breakdown voltage: 100 V
Maximum drain current (Abs) (ID): 9.6 A
Maximum drain current (ID): 3.3 A
Maximum drain source on resistance: 0.103 Ω
FET technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 code: S-PDSO-N5
JESD-609 code: e4
Humidity sensitivity level: one
Number of elements: one
Number of terminals: five
Operating mode: ENHANCEMENT MODE
Maximum operating temperature: 150 °C
Packaging body material: PLASTIC/EPOXY
Package shape: SQUARE
Packaging form: SMALL OUTLINE
Peak reflux temperature (° C): two hundred and sixty
Polarity/Channel Type: N-CHANNEL
Maximum power dissipation (Abs): 19 W
Maximum pulse drain current (IDM): 15 A
Certification status: Not Qualified
Subcategory: FET General Purpose Power
Surface mounting: YES
Terminal surface layer: Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal type: NO LEAD
Terminal location: DUAL
Maximum time at peak reflux temperature: thirty
Transistor applications: SWITCHING
Transistor element material: SILICON
Base Number Matches: one
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