model: | FDMA86551L |
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Brand Name: | ON Semiconductor |
Lead free: | Lead free |
Lifecycle: | Active |
IHS Manufacturer: | ON SEMICONDUCTOR |
Packing instructions: | SMALL OUTLINE, S-PDSO-N6 |
Manufacturer's package code: | 511DB |
Reach Compliance Code: | compliant |
ECCN code: | EAR99 |
HTS Code: | 8541.29.00.95 |
Factory Lead Time: | 26 weeks |
Risk level: | zero point nine eight |
Enclosure connection: | DRAIN |
to configure: | SINGLE WITH BUILT-IN DIODE |
Minimum drain source breakdown voltage: | 60 V |
Maximum drain current (Abs) (ID): | 7.5 A |
Maximum drain current (ID): | 7.5 A |
Maximum drain source on resistance: | 0.023 Ω |
FET technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum feedback capacitance (Crss): | 15 pF |
JESD-30 code: | S-PDSO-N6 |
JESD-609 code: | e4 |
Humidity sensitivity level: | one |
Number of elements: | one |
Number of terminals: | six |
Operating mode: | ENHANCEMENT MODE |
Maximum operating temperature: | 150 °C |
Packaging body material: | PLASTIC/EPOXY |
Package shape: | SQUARE |
Packaging form: | SMALL OUTLINE |
Peak reflux temperature (° C): | NOT SPECIFIED |
Polarity/Channel Type: | N-CHANNEL |
Maximum power dissipation (Abs): | 2.4 W |
Subcategory: | FET General Purpose Power |
Surface mounting: | YES |
Terminal surface layer: | Nickel/Palladium/Gold (Ni/Pd/Au) |
Terminal type: | NO LEAD |
Terminal location: | DUAL |
Maximum time at peak reflux temperature: | NOT SPECIFIED |
Transistor applications: | SWITCHING |
Transistor element material: | SILICON |
Base Number Matches: | one |
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