| model: | FDD5N50FTM |
|
| Lead free: | Lead free |
| Rohs certification or not: | accord with |
| Lifecycle: | Active |
| IHS Manufacturer: | ROCHESTER ELECTRONICS LLC |
| Part package code: | TO-252AA |
| Packing instructions: | ROHS COMPLIANT, DPAK-3 |
| Number of stitches: | three |
| Reach Compliance Code： | unknown |
| Risk level: | five point three one |
| Avalanche energy efficiency grade (Eas): | 257 mJ |
| Enclosure connection: | DRAIN |
| to configure: | SINGLE WITH BUILT-IN DIODE |
| Minimum drain source breakdown voltage: | 500 V |
| Maximum drain current (ID): | 3.5 A |
| Maximum drain source on resistance: | 1.55 Ω |
| FET technology: | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code: | TO-252AA |
| JESD-30 code: | R-PSSO-G2 |
| Humidity sensitivity level: | NOT SPECIFIED |
| Number of elements: | one |
| Number of terminals: | two |
| Operating mode: | ENHANCEMENT MODE |
| Packaging body material: | PLASTIC/EPOXY |
| Package shape: | RECTANGULAR |
| Packaging form: | SMALL OUTLINE |
| Peak reflux temperature (° C): | NOT SPECIFIED |
| Polarity/Channel Type: | N-CHANNEL |
| Maximum pulse drain current (IDM): | 14 A |
| Certification status: | COMMERCIAL |
| Surface mounting: | YES |
| Terminal surface layer: | NOT SPECIFIED |
| Terminal type: | GULL WING |
| Terminal location: | SINGLE |
| Maximum time at peak reflux temperature: | NOT SPECIFIED |
| Transistor applications: | SWITCHING |
| Transistor element material: | SILICON |
| Base Number Matches： | one |
|
