model: | FDC642P-F085 |
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Brand Name: | ON Semiconductor |
Lead free: | Lead free |
Lifecycle: | Not Recommended |
Packing instructions: | SMALL OUTLINE, R-PDSO-G6 |
Manufacturer's package code: | 419BL |
Reach Compliance Code: | compliant |
Risk level: | six point nine one |
Avalanche energy efficiency grade (Eas): | 72 mJ |
to configure: | SINGLE WITH BUILT-IN DIODE |
Minimum drain source breakdown voltage: | 20 V |
Maximum drain current (Abs) (ID): | 4 A |
Maximum drain current (ID): | 4 A |
Maximum drain source on resistance: | 0.065 Ω |
FET technology: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code: | R-PDSO-G6 |
Humidity sensitivity level: | one |
Number of elements: | one |
Number of terminals: | six |
Operating mode: | ENHANCEMENT MODE |
Maximum operating temperature: | 150 °C |
Minimum operating temperature: | -55 °C |
Packaging body material: | PLASTIC/EPOXY |
Package shape: | RECTANGULAR |
Packaging form: | SMALL OUTLINE |
Peak reflux temperature (° C): | NOT SPECIFIED |
Polarity/Channel Type: | P-CHANNEL |
Maximum power consumption environment: | 1.2 W |
Maximum power dissipation (Abs): | 1.2 W |
Maximum pulse drain current (IDM): | 20 A |
Certification status: | Not Qualified |
Reference standards: | AEC-Q101 |
Subcategory: | Other Transistors |
Surface mounting: | YES |
Terminal type: | GULL WING |
Terminal location: | DUAL |
Maximum time at peak reflux temperature: | NOT SPECIFIED |
Transistor applications: | SWITCHING |
Transistor element material: | SILICON |
Maximum closing time (toff): | 53 ns |
Maximum opening time (ton): | 23 ns |
Base Number Matches: | one |
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