| model: | FDC2612 |
|
| Brand Name： | ON Semiconductor |
| Lead free: | Lead free |
| Lifecycle: | Active |
| IHS Manufacturer: | ON SEMICONDUCTOR |
| Packing instructions: | LEAD FREE, SUPERSOT-6 |
| Manufacturer's package code: | 419BL |
| Reach Compliance Code： | compliant |
| ECCN code: | EAR99 |
| HTS Code: | 8541.29.00.95 |
| Factory Lead Time： | 8 weeks |
| Risk level: | one point zero six |
| Samacsys Description： | FDC2612, N-channel MOSFET Transistor, 1.1 A 200 V, 6-Pin SSOT |
| to configure: | SINGLE WITH BUILT-IN DIODE |
| Minimum drain source breakdown voltage: | 200 V |
| Maximum drain current (Abs) (ID): | 1.1 A |
| Maximum drain current (ID): | 1.1 A |
| Maximum drain source on resistance: | 0.725 Ω |
| FET technology: | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code: | R-PDSO-G6 |
| JESD-609 code: | e3 |
| Humidity sensitivity level: | one |
| Number of elements: | one |
| Number of terminals: | six |
| Operating mode: | ENHANCEMENT MODE |
| Maximum operating temperature: | 150 °C |
| Packaging body material: | PLASTIC/EPOXY |
| Package shape: | RECTANGULAR |
| Packaging form: | SMALL OUTLINE |
| Peak reflux temperature (° C): | NOT SPECIFIED |
| Polarity/Channel Type: | N-CHANNEL |
| Maximum power dissipation (Abs): | 0.8 W |
| Certification status: | Not Qualified |
| Subcategory: | FET General Purpose Power |
| Surface mounting: | YES |
| Terminal surface layer: | Tin (Sn) |
| Terminal type: | GULL WING |
| Terminal location: | DUAL |
| Maximum time at peak reflux temperature: | NOT SPECIFIED |
| Transistor applications: | SWITCHING |
| Transistor element material: | SILICON |
|
