| model: | FDB8880 |
|
| Brand Name： | Fairchild Semiconductor |
| Lead free: | Lead free |
| Rohs certification or not: | accord with |
| Lifecycle: | Transferred |
| IHS Manufacturer: | FAIRCHILD SEMICONDUCTOR CORP |
| Part package code: | D2PAK |
| Packing instructions: | TO-263AB, 3 PIN |
| Number of stitches: | two |
| Manufacturer's package code: | 2LD, TO263, SURFACE MOUNT |
| Reach Compliance Code： | not_compliant |
| ECCN code: | EAR99 |
| HTS Code: | 8541.29.00.95 |
| Risk level: | five point two two |
| Samacsys Confidence： | three |
| Samacsys Status： | Released |
| Schematic Symbol： | https://componentsearchengine.com/symbol.php?partID=166973 |
| PCB Footprint： | https://componentsearchengine.com/footprint.php?partID=166973 |
| Samacsys PartID： | one hundred and sixty-six thousand nine hundred and seventy-three |
| Samacsys Image： | https://componentsearchengine.com/Images/9/FDB8880.jpg |
| Samacsys Thumbnail Image： | https://componentsearchengine.com/Thumbnails/1/FDB8880.jpg |
| Samacsys Pin Count： | four |
| Samacsys Part Category： | Integrated Circuit |
| Samacsys Package Category： | TO-XXX (Inc. DPAK) |
| Samacsys Footprint Name： | TO263(DDPAK) |
| Samacsys Released Date： | 2015-04-13 16:42:51 |
| Is Samacsys： | N |
| Avalanche energy efficiency grade (Eas): | 31 mJ |
| Enclosure connection: | DRAIN |
| to configure: | SINGLE WITH BUILT-IN DIODE |
| Minimum drain source breakdown voltage: | 30 V |
| Maximum drain current (Abs) (ID): | 11 A |
| Maximum drain current (ID): | 11 A |
| Maximum drain source on resistance: | 0.0145 Ω |
| FET technology: | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code: | TO-263AB |
| JESD-30 code: | R-PSSO-G2 |
| JESD-609 code: | e3 |
| Humidity sensitivity level: | one |
| Number of elements: | one |
| Number of terminals: | two |
| Operating mode: | ENHANCEMENT MODE |
| Maximum operating temperature: | 175 °C |
| Packaging body material: | PLASTIC/EPOXY |
| Package shape: | RECTANGULAR |
| Packaging form: | SMALL OUTLINE |
| Peak reflux temperature (° C): | two hundred and sixty |
| Polarity/Channel Type: | N-CHANNEL |
| Maximum power dissipation (Abs): | 55 W |
| Certification status: | Not Qualified |
| Subcategory: | FET General Purpose Power |
| Surface mounting: | YES |
| Terminal surface layer: | Matte Tin (Sn) |
| Terminal type: | GULL WING |
| Terminal location: | SINGLE |
| Maximum time at peak reflux temperature: | NOT SPECIFIED |
| Transistor applications: | SWITCHING |
| Transistor element material: | SILICON |
| Base Number Matches： | one |
|
