model: | BSP52T1G |
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Brand Name: | ON Semiconductor |
Lead free: | Lead free |
Lifecycle: | Active |
IHS Manufacturer: | ON SEMICONDUCTOR |
Part package code: | TO-261AA |
Packing instructions: | TO-261, 4 PIN |
Number of stitches: | four |
Manufacturer's package code: | zero point zero three one eight |
Reach Compliance Code: | not_compliant |
ECCN code: | EAR99 |
Factory Lead Time: | 23 weeks |
Risk level: | zero point six one |
Samacsys Confidence: | three |
Samacsys Status: | Released |
2D Presentation: | https://componentsearchengine.com/2D/0T/224522.1.2.png |
Schematic Symbol: | https://componentsearchengine.com/symbol.php?partID=224522 |
PCB Footprint: | https://componentsearchengine.com/footprint.php?partID=224522 |
3D View: | https://componentsearchengine.com/viewer/3D.php?partID=224522 |
Samacsys PartID: | two hundred and twenty-four thousand five hundred and twenty-two |
Samacsys Image: | https://componentsearchengine.com/Images/9/BSP52T1G.jpg |
Samacsys Thumbnail Image: | https://componentsearchengine.com/Thumbnails/1/BSP52T1G.jpg |
Samacsys Pin Count: | four |
Samacsys Part Category: | Transistor |
Samacsys Package Category: | SOT223 (3-Pin) |
Samacsys Footprint Name: | SOT-223 TP-261 CASE 318E-04 |
Samacsys Released Date: | 2015-07-28 08:25:03 |
Is Samacsys: | N |
Enclosure connection: | COLLECTOR |
Maximum collector current (IC): | 1 A |
Maximum collector emitter voltage: | 80 V |
to configure: | DARLINGTON |
Minimum DC current gain (hFE): | two thousand |
JEDEC-95 code: | TO-261AA |
JESD-30 code: | R-PDSO-G4 |
JESD-609 code: | e3 |
Humidity sensitivity level: | one |
Number of elements: | one |
Number of terminals: | four |
Maximum operating temperature: | 150 °C |
Packaging body material: | PLASTIC/EPOXY |
Package shape: | RECTANGULAR |
Packaging form: | SMALL OUTLINE |
Peak reflux temperature (° C): | two hundred and sixty |
Polarity/Channel Type: | NPN |
Maximum power dissipation (Abs): | 1.25 W |
Certification status: | Not Qualified |
Subcategory: | Other Transistors |
Surface mounting: | YES |
Terminal surface layer: | Tin (Sn) |
Terminal type: | GULL WING |
Terminal location: | DUAL |
Maximum time at peak reflux temperature: | forty |
Transistor applications: | SWITCHING |
Transistor element material: | SILICON |
Base Number Matches: | one |
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