BFG540X-SMD Application Article Market Situation Hot Spot Use Introduction Supplier Quotation - China IC Network - Core 37
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  • Shenzhen Xinfulin Electronics Co., Ltd

         This member has used this website for more than 15 years

  • BFG540X-SMD
  • number -
  • manufactor -
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  • Batch No -
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  •  QQ:2881495808 QQ:308365177
  • thirteen billion four hundred and eighteen million five hundred and sixty-four thousand three hundred and thirty-seven  QQ:2881495808 QQ:308365177
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  •  BFG540X-SMD Diagram
  • Shenzhen Xinfulin Electronics Co., Ltd

      This member has used this website for more than 15 years
  • BFG540X-SMD
  • number 65000 
  • manufactor N/A 
  • encapsulation Original packaging
  • Batch No 23+ 
  • Real stock brand new genuine! Agent this model
  •  QQ:2881495753
  • 0755-23605827  QQ:2881495753
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BFG541 product parameters
model: BFG541
Lead free: Lead free
Rohs certification or not: accord with
Lifecycle: Obsolete
IHS Manufacturer: NXP SEMICONDUCTORS
Part package code: SC-73
Packing instructions: PLASTIC, SC-73, 4 PIN
Number of stitches: four
Reach Compliance Code: compliant
ECCN code: EAR99
Risk level: eight point four nine
Is Samacsys: N
Other features: HIGH RELIABILITY, LOW NOISE
Enclosure connection: COLLECTOR
Maximum collector current (IC): 0.12 A
to configure: SINGLE
Minimum DC current gain (hFE): sixty
Highest frequency band: L BAND
JESD-30 code: R-PDSO-G4
JESD-609 code: e3
Humidity sensitivity level: one
Number of elements: one
Number of terminals: four
Maximum operating temperature: 175 °C
Packaging body material: PLASTIC/EPOXY
Package shape: RECTANGULAR
Packaging form: SMALL OUTLINE
Peak reflux temperature (° C): two hundred and sixty
Polarity/Channel Type: NPN
Maximum power consumption environment: 0.65 W
Maximum power dissipation (Abs): 0.65 W
Certification status: Not Qualified
Subcategory: Other Transistors
Surface mounting: YES
Terminal surface layer: Tin (Sn)
Terminal type: GULL WING
Terminal location: DUAL
Maximum time at peak reflux temperature: thirty
Transistor applications: AMPLIFIER
Transistor element material: SILICON
Nominal transition frequency (fT): 9000 MHz
Base Number Matches: one
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