model: | BC807-25LT1G |
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Brand Name: | ON Semiconductor |
Lead free: | Lead free |
Lifecycle: | Active |
IHS Manufacturer: | ON SEMICONDUCTOR |
Part package code: | SOT-23 |
Packing instructions: | SMALL OUTLINE, R-PDSO-G3 |
Number of stitches: | three |
Manufacturer's package code: | 318-08 |
Reach Compliance Code: | compliant |
ECCN code: | EAR99 |
HTS Code: | 8541.21.00.95 |
Factory Lead Time: | 1 week |
Risk level: | zero point six one |
Samacsys Confidence: | two |
Samacsys Status: | Released |
2D Presentation: | https://componentsearchengine.com/2D/0T/249737.2.1.png |
Schematic Symbol: | https://componentsearchengine.com/symbol.php?partID=249737 |
PCB Footprint: | https://componentsearchengine.com/footprint.php?partID=249737 |
3D View: | https://componentsearchengine.com/viewer/3D.php?partID=249737 |
Samacsys PartID: | two hundred and forty-nine thousand seven hundred and thirty-seven |
Samacsys Image: | https://componentsearchengine.com/Images/9/BC807-25LT1G.jpg |
Samacsys Thumbnail Image: | https://componentsearchengine.com/Thumbnails/2/BC807-25LT1G.jpg |
Samacsys Pin Count: | three |
Samacsys Part Category: | Transistor BJT PNP |
Samacsys Package Category: | SOT23 (3-Pin) |
Samacsys Footprint Name: | SOT-23 (TO-236) CASE 318-08 ISSUE AR_1 |
Samacsys Released Date: | 2018-02-23 12:08:31 |
Is Samacsys: | N |
Maximum collector current (IC): | 0.5 A |
Maximum collector emitter voltage: | 45 V |
to configure: | SINGLE |
Minimum DC current gain (hFE): | one hundred and sixty |
JEDEC-95 code: | TO-236 |
JESD-30 code: | R-PDSO-G3 |
JESD-609 code: | e3 |
Humidity sensitivity level: | one |
Number of elements: | one |
Number of terminals: | three |
Maximum operating temperature: | 150 °C |
Packaging body material: | PLASTIC/EPOXY |
Package shape: | RECTANGULAR |
Packaging form: | SMALL OUTLINE |
Peak reflux temperature (° C): | two hundred and sixty |
Polarity/Channel Type: | PNP |
Maximum power dissipation (Abs): | 0.225 W |
Certification status: | Not Qualified |
Subcategory: | Other Transistors |
Surface mounting: | YES |
Terminal surface layer: | Tin (Sn) |
Terminal type: | GULL WING |
Terminal location: | DUAL |
Maximum time at peak reflux temperature: | forty |
Transistor element material: | SILICON |
Nominal transition frequency (fT): | 100 MHz |
Base Number Matches: | one |
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