2SK1285-AZ/JM Chinese Information Application Article Market Situation Hot Spot Use Introduction - China IC Network - Core 37
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  • Shenzhen Xinfulin Electronics Co., Ltd

         This member has used this website for more than 15 years

  • 2SK1285-AZ/JM
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  •  QQ:2881495808 QQ:2881495808 copy
     QQ:308365177 QQ:308365177 copy
  • thirteen billion four hundred and eighteen million five hundred and sixty-four thousand three hundred and thirty-seven  QQ:2881495808 QQ:308365177
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  •  2SK1285-AZ/JM diagram
  • Shenzhen Huaxin Shengshi Technology Co., Ltd

      This member has used this website for more than 13 years
  • 2SK1285-AZ/JM
  • number 865000 
  • manufactor RENESAS 
  • encapsulation Original packaging
  • Batch No Latest batch number
  • First class agent, original special spot!
  •  QQ:800882895 QQ:800882895 copy
  • 0755-23941632  QQ:800882895
  •  2SK1285-AZ/JM diagram
  • Shenzhen Ruitianxin Technology Co., Ltd

      This member has used this website for more than 7 years
  • 2SK1285-AZ/JM
  • number 20000 
  • manufactor NEC 
  • encapsulation TO126 
  • Batch No 22+ 
  • Shenzhen stock to ensure original and genuine products
  •  QQ:1940213521 QQ:1940213521 copy
  • fifteen billion nine hundred and seventy-three million five hundred and fifty-eight thousand six hundred and eighty-eight  QQ:1940213521
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2SK1286 product parameters
model: 2SK1286
Rohs certification or not: Non conformance
Lifecycle: Obsolete
Packing instructions: FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code: compliant
ECCN code: EAR99
HTS Code: 8541.29.00.95
Risk level: five point three five
Enclosure connection: ISOLATED
to configure: SINGLE WITH BUILT-IN DIODE
Minimum drain source breakdown voltage: 60 V
Maximum drain current (ID): 15 A
Maximum drain source on resistance: 0.095 Ω
FET technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 code: R-PSFM-T3
JESD-609 code: e0
Number of elements: one
Number of terminals: three
Operating mode: ENHANCEMENT MODE
Packaging body material: PLASTIC/EPOXY
Package shape: RECTANGULAR
Packaging form: FLANGE MOUNT
Peak reflux temperature (° C): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Maximum pulse drain current (IDM): 60 A
Certification status: Not Qualified
Surface mounting: NO
Terminal surface layer: TIN LEAD
Terminal type: THROUGH-HOLE
Terminal location: SINGLE
Maximum time at peak reflux temperature: NOT SPECIFIED
Transistor applications: SWITCHING
Transistor element material: SILICON
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