model: | 2N7002-7-F |
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Lead free: | Lead free |
Rohs certification or not: | accord with |
Lifecycle: | Active |
Packing instructions: | SMALL OUTLINE, R-PDSO-G3 |
Number of stitches: | three |
Reach Compliance Code: | compliant |
ECCN code: | EAR99 |
Risk level: | zero point four five |
Other features: | HIGH RELIABILITY, LOW THRESHOLD |
to configure: | SINGLE WITH BUILT-IN DIODE |
Minimum drain source breakdown voltage: | 60 V |
Maximum drain current (Abs) (ID): | 0.115 A |
Maximum drain current (ID): | 0.115 A |
Maximum drain source on resistance: | 13.5 Ω |
FET technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum feedback capacitance (Crss): | 5 pF |
JESD-30 code: | R-PDSO-G3 |
JESD-609 code: | e3 |
Humidity sensitivity level: | one |
Number of elements: | one |
Number of terminals: | three |
Operating mode: | ENHANCEMENT MODE |
Maximum operating temperature: | 150 °C |
Packaging body material: | PLASTIC/EPOXY |
Package shape: | RECTANGULAR |
Packaging form: | SMALL OUTLINE |
Peak reflux temperature (° C): | two hundred and sixty |
Polarity/Channel Type: | N-CHANNEL |
Maximum power dissipation (Abs): | 0.3 W |
Certification status: | Not Qualified |
Subcategory: | FET General Purpose Power |
Surface mounting: | YES |
Terminal surface layer: | Matte Tin (Sn) |
Terminal type: | GULL WING |
Terminal location: | DUAL |
Maximum time at peak reflux temperature: | forty |
Transistor applications: | SWITCHING |
Transistor element material: | SILICON |
Base Number Matches: | one |
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