| model: | 2N7002,215 |
|
| Brand Name： | Nexperia |
| Lifecycle: | Active |
| IHS Manufacturer: | NEXPERIA |
| Part package code: | TO-236 |
| Number of stitches: | three |
| Manufacturer's package code: | SOT23 |
| Reach Compliance Code： | compliant |
| ECCN code: | EAR99 |
| HTS Code: | 8541.21.00.95 |
| Factory Lead Time： | 4 weeks |
| Risk level: | zero point five five |
| Samacsys Description： | MOSFET N-Channel 60V 0.3A TO236AB NXP 2N7002,215 N-channel MOSFET Transistor, 0.3 A, 60 V, 3-Pin TO-236AB |
| to configure: | SINGLE WITH BUILT-IN DIODE |
| Minimum drain source breakdown voltage: | 60 V |
| Maximum drain current (ID): | 0.3 A |
| Maximum drain source on resistance: | 5 Ω |
| FET technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss): | 10 pF |
| JEDEC-95 code: | TO-236AB |
| JESD-30 code: | R-PDSO-G3 |
| JESD-609 code: | e3 |
| Humidity sensitivity level: | one |
| Number of elements: | one |
| Number of terminals: | three |
| Operating mode: | ENHANCEMENT MODE |
| Maximum operating temperature: | 150 °C |
| Minimum operating temperature: | -65 °C |
| Packaging body material: | PLASTIC/EPOXY |
| Package shape: | RECTANGULAR |
| Packaging form: | SMALL OUTLINE |
| Peak reflux temperature (° C): | two hundred and sixty |
| Polarity/Channel Type: | N-CHANNEL |
| Reference standards: | IEC-60134 |
| Surface mounting: | YES |
| Terminal surface layer: | Tin (Sn) |
| Terminal type: | GULL WING |
| Terminal location: | DUAL |
| Maximum time at peak reflux temperature: | thirty |
| Transistor applications: | SWITCHING |
| Transistor element material: | SILICON |
|
