| model: | 2MBI150S-120 |
|
| Lifecycle: | Obsolete |
| IHS Manufacturer: | FUJI ELECTRIC CO LTD |
| Packing instructions: | FLANGE MOUNT, R-XUFM-X7 |
| Reach Compliance Code： | unknown |
| Risk level: | five point eight two |
| Is Samacsys： | N |
| Enclosure connection: | ISOLATED |
| Maximum collector current (IC): | 200 A |
| Maximum collector emitter voltage: | 1200 V |
| to configure: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Gate emitter maximum voltage: | 20 V |
| JESD-30 code: | R-XUFM-X7 |
| Number of elements: | two |
| Number of terminals: | seven |
| Maximum operating temperature: | 150 °C |
| Packaging body material: | UNSPECIFIED |
| Package shape: | RECTANGULAR |
| Packaging form: | FLANGE MOUNT |
| Polarity/Channel Type: | N-CHANNEL |
| Maximum power dissipation (Abs): | 1000 W |
| Certification status: | Not Qualified |
| Subcategory: | Insulated Gate BIP Transistors |
| Surface mounting: | NO |
| Terminal type: | UNSPECIFIED |
| Terminal location: | UPPER |
| Transistor applications: | POWER CONTROL |
| Transistor element material: | SILICON |
| Nominal disconnection time (toff): | 450 ns |
| Nominal switching on time (ton): | 350 ns |
| VCEsat-Max： | 2.6 V |
| Base Number Matches： | one |
|
![2MBI150S-120 [Special Spot]](https://uploadfile.ic37.com/uploadfile/Product/2015-4-22/154221114569150.jpg){kind=small}
