1SMB12AT3G Schematic Diagram Functional Circuit Principle Chip Pin Definition Pin Diagram and Functions - China IC Network - Core 37
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  • Shenzhen Xinfulin Electronics Co., Ltd

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  • Shenzhen Huasidun Electronic Technology Co., Ltd

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  • Shenzhen Xinlicheng Technology Co., Ltd

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  • manufactor ON Sammy
  • encapsulation 12V reverse breakdown voltage, 600W peak power, unidirectional TVS
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  • manufactor ON 
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  • Shenzhen Yuchuanxiang Technology Co., Ltd

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  • manufactor ON 
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1SMB12AT3G product parameters
model: 1SMB12AT3G
Brand Name: ON Semiconductor
Lead free: Lead free
Rohs certification or not: accord with
Lifecycle: Transferred
Part package code: DO-214
Packing instructions: R-PDSO-C2
Number of stitches: two
Manufacturer's package code: 403A-03
Reach Compliance Code: not_compliant
ECCN code: EAR99
HTS Code: 8541.10.00.50
Risk level: three point two four
Other features: EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE, HIGH RELIABILITY, UL RECOGNIZED
Maximum breakdown voltage: 14.7 V
Minimum breakdown voltage: 13.3 V
Maximum clamping voltage: 19.9 V
to configure: SINGLE
Diode element material: SILICON
Diode type: TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code: DO-214AA
JESD-30 code: R-PDSO-C2
JESD-609 code: e3
Humidity sensitivity level: one
Maximum nonrepeatable peak reverse power dissipation: 600 W
Number of elements: one
Number of terminals: two
Maximum operating temperature: 150 °C
Minimum operating temperature: -65 °C
Packaging body material: PLASTIC/EPOXY
Package shape: RECTANGULAR
Packaging form: SMALL OUTLINE
Peak reflux temperature (° C): two hundred and sixty
Polarity: UNIDIRECTIONAL
Maximum power dissipation: 0.55 W
Certification status: Not Qualified
Maximum repetitive peak reverse voltage: 12 V
Subcategory: Transient Suppressors
Surface mounting: YES
Technology: ZENER
Terminal surface layer: Tin (Sn)
Terminal type: C BEND
Terminal location: DUAL
Maximum time at peak reflux temperature: forty
Base Number Matches: one
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