1N4150W-V-GS18 brand new original schematic diagram Functional circuit principle of each pin Chip pin definition - China IC network - Core 37
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  • Shenzhen Xinfulin Electronics Co., Ltd

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  •  1N4150W-V-GS18 drawing
  • Beijing Shoutian International Co., Ltd

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  • manufactor Vishay / Small Signal & Opto Products (S 
  • encapsulation ★ Original packaging
  • Batch No 16+ 
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  • Shenzhen Jingyu Technology Co., Ltd

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  • 1N4150W-V-GS18
  • number 57500 
  • manufactor VISHAY Weishi
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  • Beijing Yuankun Weiye Technology Co., Ltd

      This member has used this website for more than 17 years
  • 1N4150W-V-GS18
  • number 5000 
  • manufactor Vishay Semiconductors 
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  • Batch No 16+ 
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  •  1N4150W-V-GS18 drawing
  • Shenzhen Xinmai Industrial Co., Ltd

      This member has used this website for more than 11 years
  • 1N4150W-V-GS18
  • number 26980 
  • manufactor VISHAY 
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1N4150W-V-GS18 product parameters
model: 1N4150W-V-GS18
Lead free: Lead free
Lifecycle: Obsolete
IHS Manufacturer: VISHAY SEMICONDUCTORS
Packing instructions: R-PDSO-G2
Number of stitches: two
Reach Compliance Code: unknown
ECCN code: EAR99
HTS Code: 8541.10.00.70
Risk level: five point three two
Is Samacsys: N
to configure: SINGLE
Diode element material: SILICON
Diode type: RECTIFIER DIODE
Maximum forward voltage (VF): 1 V
JESD-30 code: R-PDSO-G2
JESD-609 code: e3
Humidity sensitivity level: one
Number of elements: one
Number of terminals: two
Maximum operating temperature: 150 °C
Maximum output current: 0.2 A
Packaging body material: PLASTIC/EPOXY
Package shape: RECTANGULAR
Packaging form: SMALL OUTLINE
Peak reflux temperature (° C): two hundred and sixty
Maximum power dissipation: 0.41 W
Certification status: Not Qualified
Maximum repetitive peak reverse voltage: 50 V
Maximum reverse recovery time: 0.004 µs
Subcategory: Rectifier Diodes
Surface mounting: YES
Terminal surface layer: Matte Tin (Sn)
Terminal type: GULL WING
Terminal location: DUAL
Maximum time at peak reflux temperature: forty
Base Number Matches: one
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