Introduction to Journal of Semiconductor Science
The Journal of Semiconductors is an academic journal sponsored by the Chinese Society of Electronics and undertaken by the Institute of Semiconductors of the Chinese Academy of Sciences. It reports the latest scientific research achievements and technological progress in semiconductor physics and semiconductor science and technology, and is included by EI, CA, SA, etc. It has won many awards in the journal evaluation of the Chinese Academy of Sciences, the National Science Commission, the Propaganda Department of the CPC Central Committee, and the National Press and Publication Administration.
Column setting of Journal of Semiconductor
The main columns of Journal of Semiconductors include: research bulletin, research paper, research bulletin, technical progress, etc.
Honorary Information of Journal of Semiconductor
Subscription mode of Journal of Semiconductor
Address: No.35, Qinghua East Road, Haidian District, Beijing, 100083.
Notice to contributors of Journal of Semiconductor
1. Article title: generally no more than 20 Chinese characters. If necessary, add subtitles and translate them into English.
2. Author's name and work unit: under the title, the author's name should be written. Under the name, the company's name (first and second level units), city (province name must be added before a city that is not the capital of a province), and zip code should be written. Multiple authors from different units should list the above information with serial numbers.
3. Abstract: It should be written in the third person, without "this article" or "the author" as the subject. It should be a short article with clear meaning and reality that can objectively reflect the core ideas and innovative ideas of the article. It should not be written as background explanation or "central ideas". It is better to write 100-200 words.
4. Key words: 3-5, separated by semicolons, select independent real words related to the core content of the article.
5. Body title: The content should be concise and clear, and the level should not be too many. The level serial number is one, (one), 1, (1). If there are few levels, the serial number can be selected in sequence.
6. Text: generally no more than 10000 characters, the text is in Song typeface with a small size of 4, and is typeset in a column.
7. Number usage: in accordance with GB/T15835-1995 Regulations on the Use of Numbers in Publications, Arabic numerals shall be used for the year, year, month, day, hour, various counts and measurements in the calendar year; Chinese characters and numerals are used in the Chinese calendar, the calendar of the Qing Dynasty and its earlier years, the day of the week, the stereotyped words, phrases, idioms, abbreviations, and the synopsis of the adjacent two numerals used side by side as morphemes.
8. Charts and tables: try to use as few as possible in the text. When it is necessary to use charts and tables, they should be concise, clear and take up less space. All charts and tables should be black lines, numbered in Arabic numerals in sequence. There should be concise table titles (above the table) and figure titles (below the table). The data in the table should indicate the source of data.
9. Notes: Notes mainly include explanatory notes and citation notes, which are listed before references at the end of the article. Interpretative annotation is a further explanation or supplementary explanation of a specific content in the text of a treatise; Citation notes include all kinds of citations that are not suitable for inclusion in the references after the text and the abbreviated forms of individual references after the text, whose serial numbers are ① ② ③.
10. References: References are the publicly published bibliographies cited by the author when writing the treatise, and are descriptions of the citation author, works, provenance, version, etc. The text is marked with serial numbers, and the detailed citation information is arranged at the end of the text in order. The following types of references are identified in a single letter way: ordinary books [M], conference papers [C], newspaper articles [N], journal articles [J], dissertations [D], reports [R], standards [S], patents [P], compilations [G], archives [B], ancient books [O], reference tools [K], other unspecified documents [Z]. The format and examples are as follows:
(1) Format of books: [serial number] main responsible person. Document title: other title information (optional) [document type identification]. Other responsible person (optional). Place of publication: publisher, year of publication: start and end page numbers
(2) Format of journal article: [serial number] Main responsible person. Title of the document [J]. Title of the journal (it is recommended to add ISSN number after the foreign title), year, volume (issue): start and end page numbers
(3) Newspaper article format: [serial number] Main responsible person. Document title [N]. Newspaper name, publication date (edition)
(4) Format of ancient books: [Serial number] Main responsible person. Document title [O]. Other responsible persons (including proofreading, surveying, annotation, approval, etc.). Publication date (ancient calendar year) and publication organization (version). Collection organization
(5) Format of separated literature: [Serial number] Main responsible person of separated literature. Title of separated literature [Document type identification]//Main responsible person of original literature (optional). Title of original text. Place of publication: publisher, year of publication: start and end pages of separated literature
(6) Electronic document format: main responsible person, document title [document type identification/carrier type identification], source or accessible address, publication or update date/citation date (optional)
(7) Repeated citation mark: when the same document of the same author is cited many times, it only appears once in the references after the text, without page numbers; The text shall be marked with the serial number of the first cited document, and the citation page number shall be described outside the corner mark of the serial number.
11. Fund projects: For the articles that have won the national fund and provincial and ministerial scientific research projects, please indicate the name and number of the fund project, and clearly mark them according to the project certification text.
12. About the author: name (year of birth -), gender, nationality (Han nationality can be omitted), native place, full name of the current employer, professional title, degree, and research direction.
13. Please indicate the author's telephone number, e-mail, recipient, detailed address and zip code.
14. Others: please do not send two copies at a time, and please keep the original copy. This magazine will not reject the manuscript.
Example of Journal of Semiconductor
A 16 bit, 96kHz bandwidth Σ - Δ AD converter using chopper zero stabilization technology
Experimental study on electromechanical coupling characteristics of double barrier quantum well films
Effect of nitrogen doping on the non-equilibrium electron transport properties of single-walled carbon nanotubes
Improvement of (0001) GaN Surface Topography by Modulation Interruption Growth Technology under Indium Beam Protection
Strain and annealing effects of SiGe/Si heterostructures co grown by MBE in microregion
Calculation of miscibility gap of InGaN
Effects of Substrate Temperature and Growth Rate on Self organized Growth of InxGa1-xAs/GaAsQD in MBE
Quantitative Analysis of GaAs (100) Thermal Annealed Surface by Variable Angle XPS
Raman Spectra of Ge/Si (100) Interface Interdiffusion
Electroluminescence of Si, Ge and Ar Ion Implanted Silicon rich Silica
Nano-SiC Thin Films Grown on Silicon Substrate by HFCVD Method and Their Room Temperature Photoluminescence
Room temperature photoluminescence properties of Si based thermally oxidized Si1-x-yGexCy thin films
UHV/CVD Growth of Relaxed SiGe Epitaxial Layer
Analysis of Passivation of 4H SiCn+pp+Structure with SIPOS-SiO2 Composite Layer
Analysis of 6H SiCpn junction electrical characteristics under neutron irradiation
