NXP joined hands with TSMC to launch the industry's first automotive level 16 nanometer FinFET embedded MRAM electronic engineering world

NXP works together TSMC Launched the industry's first automotive 16 nanometer FinFET embedded MRAM

 NXP and TSMC jointly develop embedded MRAM IP using TSMC 16 nm FinFET technology

 With MRAM, automobile manufacturers can introduce new functions more efficiently and accelerate OTA Upgrade and eliminate mass production bottlenecks

 NXP plans to launch the new generation S32 regional processor and the first batch of GM MCU samples using this technology in early 2025

Eindhoven, Netherlands - May 22, 2023—— NXP Semiconductor recently announced its cooperation with TSMC to deliver the industry's first automotive embedded MRAM (magnetic random access memory) using 16 nanometer FinFET technology. In the transition to software defined vehicle (SDV), automobile manufacturers need to support multiple generations of software upgrades on a single hardware platform. The 16 nanometer FinFET technology is used to combine NXP's high-performance S32 automobile processor with the fast and highly reliable new generation nonvolatile memory MRAM, creating an ideal hardware platform for the evolution of software defined automobiles.

It takes about 1 minute for Flash memory to update 20MB code, while it only takes about 3 seconds for MRAM To minimize the downtime caused by software update, automobile manufacturers can eliminate the bottleneck caused by long module programming. In addition, MRAM provides up to one million update cycles, and its durability exceeds Flash Memory It is ten times more than other emerging memory technologies, providing highly reliable technology for vehicle failure defects.

Software defined automobile allows automobile manufacturers to introduce comfortable, safe and convenient new functions through OTA upgrading, extend the service life of automobiles, enhance the functionality and attractiveness of automobiles, and improve profitability. Software based functions are becoming more and more common in automobiles, and the update frequency increases accordingly, so the speed and reliability of MRAM will become more important.

TSMC's 16FinFET embedded MRAM technology exceeds the strict requirements of vehicle specification level applications, has a durability of one million update cycles, supports reflow soldering, and retains data for 20 years at 150 ℃.

Dr. Kevin Zhang, senior vice president of business development of TSMC, said: "The innovators of NXP can always quickly tap the potential of TSMC's new technology, especially in the field of highly demanding automotive applications. We are very happy to see that NXP's S32 platform uses our advanced MRAM technology, enabling a new generation of software to define cars."

Henri Ardevol, executive vice president and general manager of automotive processor business of NXP, said: "NXP has successfully cooperated with TSMC for decades, and consistently delivered high-quality embedded memory solutions for the automotive market. MRAM is an innovative support for NXP S32 automotive solution product combination, and will play an important supporting role in the new generation of automotive architecture."

Time to market

The test sample has been produced and is under evaluation. The first batch of samples is planned to be provided to major customers in early 2025.

keyword: NXP TSMC Automotive FinFET Embedded MRAM Reference address: NXP joined hands with TSMC to launch the industry's first automotive level 16 nanometer FinFET embedded MRAM

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