It is indeed Samsung! Promote 4F2VCT DRAM prototype products next year

Lee Siwoo, executive vice president of Samsung Electronics, said at the IEEE IMW 2024 seminar recently that the company plans to launch 4F2VCT DRAM prototype products next year. At present, 3D DRAM mainly focuses on two structures: one is 4F2VCT (vertical channel transistor ）DRAM； The other is VS-CAT (vertical stack cell array transistor) DRAM. The former is developed to z direction in DRAM unit structure, and the area can be reduced by about 30%; The latter is similar to 3D NAND, which improves capacity and reduces current interference by stacking multiple DRAMs. Samsung Electronics expects to use a dual wafer structure, that is, the storage unit is separated from the peripheral logic unit, and W2W hybrid bonding is used to realize the production of VS-CAT DRAM finished products. At present, Samsung Electronics has internally implemented 16 layers of VS-CAT DRAM, while Micron is at the level of 8 layers of stack.

In addition, at the meeting, Lee Siwoo also discussed the possibility of applying BSPDN back power supply technology to 3D DRAM memory, and believed that this technology would help fine power supply regulation for a single memory bank in the future.

This article is an original article. If it is reproduced, please indicate the source: It is indeed Samsung! Promote 4F2VCT DRAM prototype products next year https://dcdv.zol.com.cn/873/8734890.html