Compound semiconductor material

Compound formed by two or more elements in a certain atomic ratio

synonym Compound semiconductor (Semiconductor type) generally refers to compound semiconductor materials

This entry is made by Compilation and application of scientific encyclopedia entries of "Science Popularization China" to examine.

Compound semiconductor materials are formed by two or more elements in a certain atomic ratio chemical compound And has a definite Band gap width and Band structure etc. semiconductor Properties are called compound semiconductor materials.

Chinese name: Compound semiconductor material
Foreign name: Compound semiconductor material

Applicable fields: Atomic matching chemical compound
Meaning: Definitive Band gap width and Band structure
Classification: Ⅲ - Ⅴ and Ⅱ - Ⅵ Compound semiconductor

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brief introduction

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Formed by two or more elements in a certain atomic ratio chemical compound And has a definite Band gap width and Band structure etc. semiconductor Properties are called compound semiconductor materials^[1] 。

classification

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There are many kinds of compound semiconductor materials with different properties, such as Ⅲ - Ⅴ and Ⅱ - Ⅵ compound semiconductors and their solid solution materials, Ⅳ - Ⅳ compound semiconductors (SiC) and oxide semiconductor (Cu2O), etc. There are wide band gap materials and high Electron mobility Material Science; There are direct band gap materials and indirect band gap materials. Therefore, compound semiconductor materials have more extensive applications than element semiconductors.

nature

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Most compound semiconductors contain one or more volatile components, which will be completely decomposed from the melt at the melting point. Therefore, the synthesis, purification and single crystal preparation of compound semiconductor materials are more complex and difficult. Maintaining the stoichiometric ratio of the melt is an important condition for the preparation of compound semiconductor materials^[2] 。

preparation

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Generally, compound semiconductor single crystals are prepared by horizontal Bridgman method (HB), liquid sealed Czochralski method (LEC), high-pressure liquid sealed Czochralski method (HPLEC), vertical gradient solidification method (VGF), and their thin films and ultra-thin layer microstructure compound materials are prepared by liquid phase epitaxy (LPE), gas phase epitaxy (VPE), molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD), etc.

Material advantages

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Compound semiconductor integrated circuit Its main characteristics are ultra-high speed, low power consumption, multi-function and radiation resistance. Taking GaAs as an example, through comparison, it can be concluded that:

1. Compound semiconductor materials have high Electron mobility And electron drift speed, so higher working frequency and faster working speed can be achieved.

two Schottky barrier MES structure with superior characteristics and easy to realize good grid control characteristics.

3. It is a semi insulating substrate with high intrinsic resistivity. It is easy to realize self isolation and simplify the process in circuit technology, which is suitable for microwave circuits and millimeter wave integrated circuits.

4. The band gap is wide, which can be used in the high-temperature field where Si devices are difficult to work.

application

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Compound semiconductor materials have been widely used: in the military, they can be used in intelligent weapons, aerospace radars and other fields, in addition, they can also be used in mobile phones, optical fiber communications, lighting, large workstations, live broadcast communication satellites and other commercial and civil fields^[3] 。

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