1倍“:[9,72],”Ge“:[10,39,73140151173],”xmlns:xlink=\“http://www.w3.org/1999/xlink\“>x“:[13,76],”量子“:[14,77],”井“:[15],”(SiGe“:[16],”QW“:[17],”用于“:[18,26,68,98154164171],”未来“:[19],”DRAM“:[20165],”外围“:[21],”晶体管“:[22],”和“:[23,52113144],”更多“:[24],”一般“:[25],“低”:[27155],“功率”:[28156],“应用”:[29167],“是”:[30,33,66,81115122136142168],“调查”。“:[31],“It”:[32],“shown”:[34],“that”:[35117],“an”:[36,54,61],“increase”:[37,55,62],“content”:[0141153],“in”:[41103],“channel”:[43,58152],“leads”:[44],“to”:[45,53,83119133],“a”:[46,99172],“significant”:[47],“reduction”:[48],“阈值”:[50],“voltage”:[51],“long”“:[57],”移动性。“:[59],”“然而,”:[60],“外部”:[64],“电阻”:[65],“观察到的”:[67],“井”:[78],“器件”:[79],“其中”:[80],“属性”:[82],“结”:[84101108],“感应”:[85],“缺陷”:[86],“创建”:[87],“at”:[88],“SiGe/Si”:[90],“缓冲区”:[91],“层”:[92],“接口”。“:[93],“This”:[94],“highlights”:[95],“need”:[97],“dedicated”:[100],“solution”:[102],“SiGe”:%104],“QW”:[105],“devices”。“:[106],“The”:[107158],“leakages”:[109],“are”:[110],“alsor”:[111],“respectived”,“:[112],“it”:[1114145],“found”:%116],“Band”:[11810132134],“Tunneling”:[121135],“dominate”:[124],“mechanism”:[125],“setting”:%126],“minimum”:[128159],“Off-state”:[129],“leakage”:[130162],“current”。“:[131],”增加“:[137],”当“:[138],”增大,“:[143],”可以“:[146],”有效“:[147],”上限“:[148],”允许“:[150],”应用程序。“:[157],”关“:[160],”状态“:[161],”要求“:[163],”外围“:[166],”静止“:[169],”获得“:[170],”浓度“:[174],”45%。“:[176]},”cited_by_api_url“:”https://api.openalex.org/works?filter=引用:W1546824432“,”counts_by_year“:[{”年“:2016,”cited_by_count“:1}],”更新日期“:”2024-08-14T00:01:57.347339“,”创建日期“:“2016-06-24”}